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KCR402T - BJT Current Regulating Device

KCR402T_875861.PDF Datasheet


Part No.	KCR402T
Description	BJT Current Regulating Device
File Size	66.49K / 3 Page
Maker	KEC semiconductor
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PART	Description	Maker
IP3842A IP3843A IP2843A IP2842A IP1842A IP1843A IP	Current Mode Regulating Pulse Width Modulator start up I00uA 电流模式调节脉冲宽度调制器启动起来，我是00uA CURRENT MODE REGULATING PULSE WIDTH MODULATORS	TT electronics Semelab Limited TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
BD140-25 BD136-25 BD138-25	TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 1.5A I(C) \| TO-126 Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:3mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 1.5A I(C) \| TO-126 晶体管\|晶体管\|进步党\| 80V的五（巴西）总裁\| 1.5AI（丙）\|126	Electronic Theatre Controls, Inc.
SG3525AN 4286 SG3525AP013TR SG2525AP013TR SG2525AN	REGULATING PULSE WIDTH MODULATORS From old datasheet system REGULATING PULSE WIDTH MODULATORS Voltage Mode PWM	STMicroelectronics ST Microelectronics
154-22 153-28 154-18 154-04 154-10 154-14 154-12 1	TRANSISTOR \| BJT \| NPN \| 220V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 140V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 260V V(BR)CEO \| 7.5A I(C) TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 7.5A I(C) TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 240V V(BR)CEO \| 7.5A I(C) TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 7.5A I(C) \| STR-1/4 晶体管\|晶体管\|叩\| 40V的五（巴西）总裁\| 7.5AI（丙）\|个STR - 1 / 4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 7.5A I(C) \| STR-1/4 晶体管\|晶体管\|叩\| 60V的五（巴西）总裁\| 7.5AI（丙）\|个STR - 1 / 4 TRANSISTOR \| BJT \| NPN \| 280V V(BR)CEO \| 7.5A I(C) 晶体管\|晶体管\| npn型\| 280伏特五（巴西）总裁\| 7.5AI（丙	NXP Semiconductors N.V. Bel Fuse, Inc. YEONHO Electronics Co., Ltd.
2N1122 2N1405 2N1407 2N1101 2N1140 2N1535 2N1472 2	TRANSISTOR \| BJT \| PNP \| 11V V(BR)CEO \| 50MA I(C) \| TO-24 TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 50MA I(C) \| TO-12 TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 100MA I(C) \| TO-22 TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 5A I(C) \| TO-3 TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 100MA I(C) \| TO-9 TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 3.5A I(C) \| IST-3RT-1/2 TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 50MA I(C) \| TO-5 TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 50A I(C) \| TO-36 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR \| BJT \| NPN \| 150V V(BR)CEO \| 7.5A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 250V V(BR)CEO \| 7.5A I(C) \| TO-82 TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 12A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 110V V(BR)CEO \| TO-5 TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 50MA I(C) \| TO-5 TRANSISTOR \| BJT \| PNP \| 35V V(BR)CEO \| 100MA I(C) \| TO-5 TRANSISTOR \| BJT \| NPN \| 25MA I(C) \| TO-22VAR TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 5A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 25A I(C) \| TO-36 TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 5A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 5A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 5A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 90V V(BR)CEO \| 5A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 7A I(C) \| TO-3 晶体管\|晶体管\|进步党\| 50V五（巴西）总裁\| 7A条一（c）\| 5-Pin, Multiple-Input, Programmable Reset ICs 晶体管\|晶体管\|进步党\| 12V的五（巴西）总裁\| 100mA的一（c）\| 5-Pin, Multiple-Input, Programmable Reset ICs 晶体管\|晶体管\|进步党\| 65V的五（巴西）总裁\|5A一（c）\|6 TRANSISTOR \| BJT \| PNP \| 15A I(C) \| TO-36 TRANSISTOR \| BJT \| PNP \| 38V V(BR)CEO \| 15A I(C) \| TO-41	NXP Semiconductors N.V. Microsemi, Corp.
MBNP2026G6	N- Channel Enhancement mode MOSFET AND PNP BJT Complex Device	Cystech Electonics Corp...
STIP4006 STI2006 STIP3006 STI2506 STIP2506 STIP150	Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:320V; Capacitance:60pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-202; Current, It av:6A; Holding Current:50mA TRANSISTOR \| BJT \| NPN \| 250V V(BR)CEO \| 1A I(C) \| TO-66 Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:20mA TRANSISTOR \| BJT \| PNP \| 150V V(BR)CEO \| 1A I(C) \| TO-66
SST505 SST507 SST510 SST503 SST509 SST508 SST502 S	(SST5xx) CURRENT REGULATING DIODES Transceiver IC; Transceiver Type:Monolythic Bus Transceiver; Number of Receivers:1; Interface Type:Serial; Supply Voltage Max:36V; Package/Case	LINEAR[Linear Integrated Systems]
ADY27IV AL100 AL102 AL103 ASZ17 ASZ15 ASZ16 ASZ18	TRANSISTOR \| BJT \| PNP \| 130V V(BR)CEO \| 10A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 130V V(BR)CEO \| 6A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 32V V(BR)CEO \| 8A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 8A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 32V V(BR)CEO \| 10A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 26V V(BR)CEO \| 4A I(C) \| TO-66VAR TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 600MA I(C) \| TO-8 TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| TO-8 TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 600MA I(C) \| TO-8 TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 4A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 20A I(C) TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 6A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 32V V(BR)CEO \| 6A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 6A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 3A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 3.5A I(C) \| TO-3 晶体管\|晶体管\|进步党\| 30V的五（巴西）总裁\| 3.5AI（丙）\| TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-3 晶体管\|晶体管\|进步党\| 60V的五（巴西）总裁\| 3A条一c）\| TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 10A I(C) \| TO-41 晶体管\|晶体管\|进步党\| 45V的五（巴西）总裁\| 10A条一（c）\|1 TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 8A I(C) \| TO-8 晶体管\|晶体管\|进步党\| 45V的五（巴西）总裁\| 8A条一（c）\| TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 3A I(C) \| TO-3 晶体管\|晶体管\|进步党\| 45V的五（巴西）总裁\| 3A条一（c）\| TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 25A I(C) 晶体管\|晶体管\|进步党\| 60V的五（巴西）总裁\|5A一（c	Cypress Semiconductor, Corp. Vicor, Corp. Atmel, Corp. Advanced Analogic Technologies, Inc. EPCOS AG
ECG48 ECG52 ECG36 ECG36MP ECG37MCP ECG50 ECG47 ECG	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 50V V(BR)CEO \| 1A I(C) \| TO-92VAR TRANSISTOR \| BJT \| NPN \| 450V V(BR)CEO \| 5A I(C) \| TO-3 TRANSISTOR \| BJT \| NPN \| 140V V(BR)CEO \| 12A I(C) \| TO-3VAR TRANSISTOR \| BJT \| PAIR \| NPN \| 140V V(BR)CEO \| 12A I(C) \| TO-3VAR TRANSISTOR \| BJT \| PAIR \| COMPLEMENTARY \| 140V V(BR)CEO \| 12A I(C) \| TO-3VAR 晶体管\|晶体管\|一对\|互补\| 140伏特五（巴西）总裁\| 12A条一（c）\|VAR TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 2A I(C) \| TO-202 晶体管\|晶体管\|进步党\| 100V的五（巴西）总裁\|甲一（c）\|02 TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 200MA I(C) \| TO-92 TRANSISTOR \| BJT \| PNP \| 150V V(BR)CEO \| 8A I(C) \| TO-220AB	Electronic Theatre Controls, Inc. Xilinx, Inc.
2N5337X	Bipolar NPN Device in a Hermetically sealed TO39 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 5A I(C) \| TO-39	Seme LAB
BD825-16 BD827-10 BD827-6 BD829-6	SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):12A; Peak Non Repetitive Surge Current, Itsm:120A; Gate Trigger Current Max, Igt:20mA SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 1.5A I(C) \| TO-202 晶体管\|晶体管\|叩\| 45V的五（巴西）总裁\| 1.5AI（丙）\|02 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 2A I(C) \| TO-202 晶体管\|晶体管\|叩\| 60V的五（巴西）总裁\|甲一（c）\|202	Analog Devices, Inc. HIROSE ELECTRIC Co., Ltd.

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